Tunnel Diode Material
A tunnel diode also known as a esaki diode is a type of semiconductor diode that has effectively negative resistance due to the quantum mechanical effect called tunneling. The germanium material is basically used to make tunnel diodes. Photo Response Enhancement In Mis P Tunnel Diode Via Discovery Of The Tunnel Diode Ieee Journals Magazine 1n3720 Datasheet Pdf Datasheet4u Com Tunnel diode works based on tunnel effect. Tunnel diode material . Leo esaki invented the tunnel diode in august 1957. It was invented in august 1957 by leo esaki yuriko kurose and takashi suzuki when they were working at tokyo tsushin kogyo now known as sony. With an area of negative resistance between the peak voltage vpe and the valley voltage vv. Tunnel diodes have a heavily doped pn junction that is about 10 nm wide. Because of this overlapping the conduction band el...
